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1. GaAs substrate N-Type <100><111>

Gallium Arsenide wafer is mainly used in opto-electronics and micro-electronics industry for making LD ,LED , microwave circuit and solar cell applications. GaAs wafer produced by two main growth techniques LEC and VGF method.GaAs wafer with ...

2. Free-Standing GaN Substrate 2inch N-Type

Gallium nitride(GaN) wafer is the third-generation of semiconductor materials.GaN materials with low heat generation rate and high breakdown electric field, it has a wide direct band gap, strong atomic bonds, high thermal conductivity, good ...

3. SiC substrate 4/6H-N epi-ready

Silicon carbide(SiC) wafer is a third-generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer. SiC wafer is more suitable for high temperature and high ...

4. silicon wafer-4/6/8/10inch N/P-type cz

Silicon is a single crystal with a basic complete lattice structure. It has different directions with different properties, which is a good semi-conductive material. Silicon purity requirement reached 99.9999999%,used in manufacturing semiconductor ...

5. sapphire wafer-2/3/4/6inch substrate C/R/A/M-Plane SSP/DSP epi-ready

Sapphire Substrates inclued C-Plane,A-Plane,R-Plane,M-Plane orientation with SSP or DSP are useful for growth of lll-V and ll-Vl compoounds, such as GaN, bright blue,green,UV LED and laser diodes. Other applications include mercury cadmium telluride ...